FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet - Page 5
![MOSFET N-CH 300V 59A TO-3P](/photos/19/9/190900/ge3to3p05-40_sml.jpg)
FDA59N30
Manufacturer Part Number
FDA59N30
Description
MOSFET N-CH 300V 59A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDA59N30.pdf
(8 pages)
Specifications of FDA59N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 29.5A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4670pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Transistor Polarity
N Channel
Continuous Drain Current Id
59A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
56mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.056 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
59 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDA59N30
Manufacturer:
IDT
Quantity:
1 430
Part Number:
FDA59N30
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDA59N30LDTU
Manufacturer:
SAMSUNG
Quantity:
3 023
FDA59N30 Rev. A
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
I
I
I
V
V
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
5
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
GS
GS
DD
DD
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
1 ----
----
----
----
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
www.fairchildsemi.com
V
V
DS
DS
(t)
(t)