FDPF20N50FT Fairchild Semiconductor, FDPF20N50FT Datasheet

MOSFET N-CH 500V 20A TO-220F

FDPF20N50FT

Manufacturer Part Number
FDPF20N50FT
Description
MOSFET N-CH 500V 20A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF20N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3390pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
38500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF20N50FT
Manufacturer:
IXYS
Quantity:
30 000
Price:
©2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50FT Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP20N50F / FDPF20N50FT
N-Channel MOSFET, FRFET
500V, 20A, 0.26Ω
Features
• R
• Low gate charge ( Typ. 50nC)
• Low C
• Fast reverse recovery switching of built-in diode
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.22Ω ( Typ.)@ V
( Typ. 27pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
D
S
GS
TO-220
FDP Series
= 10V, I
D
= 10A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
G
o
C unless otherwise noted
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
TO-220F
FDPF Series
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP20N50F
FDP20N50F FDPF20N50FT
12.9
62.5
250
2.0
0.5
0.5
20
80
-55 to +150
S
D
1110
500
±30
300
4.5
20
25
FDPF20N50FT
12.9*
UniFET
62.5
38.5
October 2007
20*
80*
3.3
0.3
-
www.fairchildsemi.com
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF20N50FT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP20N50F / FDPF20N50FT Rev 10A D Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 20A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP20N50F / FDPF20N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C iss = oss = rss = oss 4500 C 3000 iss 1500 C rss 0 0 Drain-Source Voltage [V] DS FDP20N50F / FDPF20N50FT Rev. A1 Figure 2. Transfer Characteristics 100 10 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 400 100 20V GS o *Note: T ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP20N50F 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.002 -5 10 FDP20N50F / FDPF20N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 200 100 10 1 0.1 *Notes 1mA D 0.01 1 100 150 200 o ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF20N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP20N50F / FDPF20N50FT Rev. A1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 3.3 C/W Max. θ Duty Factor ( θ www.fairchildsemi.com ...

Page 6

... FDP20N50F / FDPF20N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP20N50F / FDPF20N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP20N50F / FDPF20N50FT Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP [2.54 ±0.20 ] 9.40 FDP20N50F / FDPF20N50FT Rev. A1 TO-220F ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ±0.20 ] ±0.20 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP20N50F / FDPF20N50FT Rev. A1 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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