HUF75652G3 Fairchild Semiconductor, HUF75652G3 Datasheet - Page 4

• Manufacturer Part Number: HUF75652G3
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r
• Type: Power MOSFETr

Specifications of HUF75652G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 475nC @ 20V
• Input Capacitance (ciss) @ Vds: 7585pF @ 25V
• Power - Max: 515W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 75A
• Power Dissipation: 515W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
1000
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
200
150
100
100
50
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
0
2.5
2.0
1.5
1.0
0.5
1
2
1
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DD
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
V
DS
GS
T
3
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
0
T
J
10
= 175
T
T
SINGLE PULSE
40
J
C
o
= MAX RATED
C
= 25
4
o
C
T
80
J
= -55
V
GS
T
(Continued)
o
J
120
C
100
= 25
= 10V, I
o
5
C)
100 s
o
10ms
1ms
C
D
160
= 75A
500
200
6
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
1000
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
200
150
100
10
10
50
1.2
1.0
0.8
0.4
0.6
0.01
0
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
V
V
STARTING T
GS
GS
= 20V
= 10V
CAPABILITY
JUNCTION TEMPERATURE
-40
If R = 0
t
If R
t
AV
AV
V
DS
T
= (L)(I
= (L/R)ln[(I
J
1
t
J
, JUNCTION TEMPERATURE (
0
AV
, DRAIN TO SOURCE VOLTAGE (V)
= 150
0
, TIME IN AVALANCHE (ms)
0.1
AS
)/(1.3*RATED BV
o
C
AS
40
*R)/(1.3*RATED BV
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
V
T
GS
GS
C
80
STARTING T
= 25
V
= 7V
= 6V
GS
DSS
1
o
= V
C
120
- V
DS
o
DSS
3
DD
HUF75652G3 Rev. B
C)
, I
D
J
)
V
= 25
GS
= 250 A
160
- V
DD
=5V
o
C
) +1]
200
10
4