FQL40N50 Fairchild Semiconductor, FQL40N50 Datasheet - Page 3

• Manufacturer Part Number: FQL40N50
• Description: MOSFET N-CH 500V 40A TO-264
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQL40N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
12000
10000
8000
6000
4000
2000
10
10
10
0.4
0.3
0.2
0.1
0
2
1
0
10
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
30
V
GS
V
V
DS
DS
60
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
rss
iss
oss
90
V
GS
120
= 20V
V
C
C
C
GS
iss
oss
rss
※ Notes :
= C
= C
= C
= 10V
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
gd
gd
※ Notes :
150
(C
1. V
2. f = 1 MHz
ds
J
= shorted)
GS
= 25℃
= 0 V
180
10
10
10
10
10
10
10
10
12
10
-1
-1
2
1
0
8
6
4
2
0
2
1
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
150℃
0.4
25℃
Variation vs. Source Current
30
0.6
150℃
4
25℃
V
V
Q
SD
and Temperature
GS
G
60
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
0.8
V
V
DS
DS
V
= 400V
DS
= 250V
1.0
90
6
= 100V
-55℃
1.2
120
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 50V
= 0 V
150
D
1.6
= 40 A
Rev. A1. May 2001
180
1.8
10