FQL40N50 Fairchild Semiconductor, FQL40N50 Datasheet - Page 4

• Manufacturer Part Number: FQL40N50
• Description: MOSFET N-CH 500V 40A TO-264
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQL40N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
-1
Figure 9. Maximum Safe Operating Area
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
Operation in This Area
is Limited by R
T
V
vs. Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
C
J
= 150
= 25
DS(on)
- 5
o
0 .0 2
0 .0 1
0 .0 5
C
o
D = 0 .5
50
C
0 .1
0 .2
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
10
1 0
(Continued)
1 ms
2
o
C]
- 4
s i n g l e p u ls e
※ Notes :
100 s
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250 μ A
= 0 V
150
10 s
1 0
- 3
10
200
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
40
30
20
10
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
θ
J M
-50
DM
J C
- T
( t) = 0 .2 7 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
D M
1
C
0
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
1
75
/t
θ
2
J C
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 20 A
= 10 V
Rev. A1. May 2001
150
200