PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN025-100D_3
Product data sheet
Symbol
R
R
Fig 5.
th(j-a)
th(j-mb)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
0.001
0.01
0.1
Conditions
SOT428 package; printed-circuit board
mounted; minimum footprint
see
1
1E-06
Transient thermal impedance, Zth j-mb (K/W)
0.1
0.05
0.02
0.2
D = 0.5
single pulse
Figure 5
1E-05
Rev. 03 — 20 November 2008
1E-04
Pulse width, tp (s)
N-channel TrenchMOS SiliconMAX standard level FET
1E-03
1E-02
P
D
tp
T
1E-01
D = tp/T
lma018
1E+00
PSMN025-100D
Min
-
-
Typ
50
-
© NXP B.V. 2008. All rights reserved.
Max
-
1
Unit
K/W
K/W
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