PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT428 (DPAK)
PSMN025-100D_3
Product data sheet
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT428
2.38
2.22
L
A
2
b
1
0.93
0.46
A
1
1
e
0.89
0.71
b
IEC
b
e
E
2
1
2
1.1
0.9
b
b
1
5.46
5.00
b
2
3
JEDEC
TO-252
0.56
0.20
c
A
w
0
D
L
M
1
REFERENCES
A
6.22
5.98
Rev. 03 — 20 November 2008
D
H
1
D
min
D
4.0
mounting
base
2
L
JEITA
SC-63
1
N-channel TrenchMOS SiliconMAX standard level FET
scale
6.73
6.47
E
5
c
A
1
4.45
min
E
A
1
y
2.285
e
4.57
e
10 mm
1
10.4
H
9.6
D
PSMN025-100D
PROJECTION
EUROPEAN
2.95
2.55
L
E
1
min
0.5
L
1
© NXP B.V. 2008. All rights reserved.
0.9
0.5
L
2
ISSUE DATE
06-02-14
06-03-16
0.2
w
D
2
SOT428
max
0.2
y
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