PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
PSMN025-100D_3
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain source on-state resistance
4.5
3.5
2.5
1.5
0.5
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
40
35
30
25
20
15
10
5
0
4
3
2
1
0
-60
-60 -40 -20
0
Drain Current, ID (A)
Normalised On-state Resistance
Threshold Voltage, VGS(TO) (V)
function of drain-source voltage; typical values
junction temperature
factor as a function of junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
-40
0.2
VGS = 10V
-20
0.4
8 V
Junction temperature, Tj (C)
0
0
Drain-Source Voltage, VDS (V)
Junction Temperature, Tj (C)
0.6
20
20
0.8
40
40
6 V
60
60
1
minimum
typical
80
80
1.2
maximum
100 120 140 160 180
100 120 140 160 180
1.4
4 V
1.6
4.4 V
Rev. 03 — 20 November 2008
Tj = 25 C
1.8
4.6 V
4.8 V
lma024
lma023
lma019
5 V
4.2 V
2
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
Fig 11. Drain-source on-state resistance as a function
0.16
0.14
0.12
0.08
0.06
0.04
0.02
50
45
40
35
30
25
20
15
10
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.1
5
0
0
0
0
Drain-Source On Resistance, RDS(on) (Ohms)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
4 V
drain current; typical values
gate-source voltage
of drain current; typical values
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
Drain current, ID (A)
5
4.2 V
2
0.5
10
4
1
4.4 V
Gate-source voltage, VGS (V)
minimum
15
6
Drain Current, ID (A)
1.5
Drain current, ID (A)
Tj = 25 C
PSMN025-100D
8
20
4.6 V
2
typical
10
25
2.5
12
30
3
14
4.8 V
© NXP B.V. 2008. All rights reserved.
35
3.5
16
maximum
40
8 V
VGS = 10V
Tj = 25 C
4
175 C
18
lma020
5 V
45
4.5
6V
lma022
lma025
20
6 of 11
50
5