PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
6. Characteristics
Table 6.
PSMN025-100D_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
Figure 8
I
Figure
I
Figure 8
V
V
V
V
V
Figure 10
V
Figure
I
T
V
T
V
R
measured from tab to centre of die;
T
measured from source lead to source
bond pad; T
I
Figure 15
I
V
D
D
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 45 A; V
= 25 °C; see
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 100 V; V
= 100 V; V
= 25 V; V
= 50 V; R
= 25 V; T
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
8; see
10; see
Rev. 03 — 20 November 2008
GS
DS
j
S
DS
DS
DS
D
D
= 25 °C
/dt = -100 A/µs; V
j
Figure 9
GS
DS
L
DS
= 25 °C
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
GS
GS
Figure 11
= V
= V
= V
Figure 12
Figure 13
= 1.8 Ω; V
GS
GS
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
= 25 °C; see
j
j
j
j
j
GS
j
= 175 °C; see
= 25 °C; see
= -55 °C; see
= 175 °C; see
= 25 °C; see
j
GS
= 25 °C
j
j
= 25 °C
j
j
= 25 °C
= 175 °C
= 10 V;
= -55 °C
= 25 °C
= 10 V;
GS
= 0 V;
PSMN025-100D
Min
89
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
0.05
-
0.02
0.02
-
22
61
13
25
2600
340
195
18
72
69
58
3.5
7.5
0.87
82
0.26
© NXP B.V. 2008. All rights reserved.
Max
-
-
-
4
6
10
500
100
100
68
25
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
µC
5 of 11