PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 9
![MOSFET N-CH 100V 47A SOT428](/photos/5/32/53207/dpak_sml.jpg)
PSMN025-100D,118
Manufacturer Part Number
PSMN025-100D,118
Description
MOSFET N-CH 100V 47A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN025-100D118.pdf
(11 pages)
Specifications of PSMN025-100D,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
47 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055803118
PSMN025-100D /T3
PSMN025-100D /T3
PSMN025-100D /T3
PSMN025-100D /T3
NXP Semiconductors
8. Revision history
Table 7.
PSMN025-100D_3
Product data sheet
Document ID
PSMN025-100D_3
Modifications:
PSMN025-100D_2
PSMN025-100D_1
Revision history
19990201
Release date
20081120
19990801
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Rev. 03 — 20 November 2008
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
-
PSMN025-100D
Supersedes
PSMN025-100D_2
PSMN025-100D_1
-
© NXP B.V. 2008. All rights reserved.
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