PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 7
![MOSFET N-CH 100V 47A SOT428](/photos/5/32/53207/dpak_sml.jpg)
PSMN025-100D,118
Manufacturer Part Number
PSMN025-100D,118
Description
MOSFET N-CH 100V 47A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN025-100D118.pdf
(11 pages)
Specifications of PSMN025-100D,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
47 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055803118
PSMN025-100D /T3
PSMN025-100D /T3
PSMN025-100D /T3
PSMN025-100D /T3
NXP Semiconductors
PSMN025-100D_3
Product data sheet
Fig 12. Gate-source voltage as a function of gate
Fig 14. Transfer characteristics: drain current as a
15
14
13
12
11
10
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
0
0
Drain current, ID (A)
Gate-source voltage, VGS (V)
VDS > ID X RDS(ON)
Tj = 25 C
ID = 45 A
5
charge; typical values
function of gate-source voltage; typical values
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
1
Gate-source voltage, VGS (V)
2
Gate charge, QG (nC)
VDD = 20 V
3
175 C
4
VDD = 80 V
Rev. 03 — 20 November 2008
Tj = 25 C
5
lma027
lma021
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source current as a function of source-drain
10000
50
45
40
35
30
25
20
15
10
1000
5
0
100
10
0
Source-Drain Diode Current, IF (A)
VGS = 0 V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Capacitances, Ciss, Coss, Crss (pF)
as a function of drain-source voltage; typical
values
voltage; typical values
Source-Drain Voltage, VSDS (V)
Drain-Source Voltage, VDS (V)
1
175 C
PSMN025-100D
Tj = 25 C
10
© NXP B.V. 2008. All rights reserved.
1.1 1.2 1.3 1.4 1.5
Coss
Crss
Ciss
lma026
lma028
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