BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 2

• Manufacturer Part Number: BUK764R0-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK764R0-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 193 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK764R0-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK764R0-55B
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base;
connected to drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
Simplified outline
SOT404 (D2PAK)
…continued
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
1
= 75 A; V
mb
Figure 13
= 44 V; T
= 10 V; I
2
= 50 Ω; V
= 25 °C; unclamped
3
sup
N-channel TrenchMOS standard level FET
D
j
GS
= 25 °C;
= 25 A;
≤ 55 V;
= 10 V;
Graphic symbol
BUK764R0-55B
mbb076
G
Min
-
-
© NXP B.V. 2011. All rights reserved.
Typ
-
25
D
S
Version
SOT404
Max Unit
1.2
-
J
nC
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