BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 2
![MOSFET N-CH 55V 75A D2PAK](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK764R0-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK764R0-55B
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base;
connected to drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
Simplified outline
SOT404 (D2PAK)
…continued
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
1
= 75 A; V
mb
Figure 13
= 44 V; T
= 10 V; I
2
= 50 Ω; V
= 25 °C; unclamped
3
sup
N-channel TrenchMOS standard level FET
D
j
GS
= 25 °C;
= 25 A;
≤ 55 V;
= 10 V;
Graphic symbol
BUK764R0-55B
mbb076
G
Min
-
-
© NXP B.V. 2011. All rights reserved.
Typ
-
25
D
S
Version
SOT404
Max Unit
1.2
-
J
nC
2 of 14