BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 4
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BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
25
mounting base temperature.
(1) Capped at 75 A due to package.
Continuous drain current as a function of
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
75
(1)
j
j
= 25 °C.
= 150 °C.
125
(A)
I
10
AL
10
10
-1
2
1
10
T
mb
All information provided in this document is subject to legal disclaimers.
-3
001aaf871
(°C)
175
10
Rev. 5 — 22 April 2011
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
AL
N-channel TrenchMOS standard level FET
003aab677
(ms)
(1)
(2)
(3)
10
50
BUK764R0-55B
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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