BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 4

• Manufacturer Part Number: BUK764R0-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK764R0-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 193 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3

NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
25
mounting base temperature.
(1) Capped at 75 A due to package.
Continuous drain current as a function of
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
75
(1)
j
j
= 25 °C.
= 150 °C.
125
(A)
I
10
AL
10
10
-1
2
1
10
T
mb
All information provided in this document is subject to legal disclaimers.
-3
001aaf871
(°C)
175
10
Rev. 5 — 22 April 2011
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
AL
N-channel TrenchMOS standard level FET
003aab677
(ms)
(1)
(2)
(3)
10
50
BUK764R0-55B
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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