BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 8

MOSFET N-CH 55V 75A D2PAK

BUK764R0-55B,118

Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK764R0-55B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Normalized drain-source on-state resistance
(A)
I
100
D
1.5
0.5
a
80
60
40
20
2
1
0
0
function of gate-source voltage; typical values
-60
factor as a function of junction temperature
0
0
2
T
j
= 175 °C
60
4
T
120
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
GS
T
j
03nh20
(V)
03ne89
( ° C)
180
6
Rev. 5 — 22 April 2011
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Gate-source voltage as a function of turn-on
V
GS(th)
V
(V)
(V)
GS
10
5
4
3
2
1
0
8
6
4
2
0
−60
junction temperature
gate charge; typical values
0
N-channel TrenchMOS standard level FET
V
DS
20
(V) = 14
0
BUK764R0-55B
40
60
max
min
typ
V
60
DS
(V) = 44
120
© NXP B.V. 2011. All rights reserved.
80
T
Q
j
03nh18
G
(°C)
03aa32
(nC)
100
180
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