BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 5

• Manufacturer Part Number: BUK764R0-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK764R0-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 193 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK764R0-55B
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
-1
-2
-3
3
2
1
1
10
10
(1) Capped at 75 A due to package.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.05
0.2
0.1
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Limit R
10
-5
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
-4
(1)
Rev. 5 — 22 April 2011
Conditions
see
mounted on a printed-circuit
board; minimum footprint
Figure 5
10
-3
DC
N-channel TrenchMOS standard level FET
10
10
-2
BUK764R0-55B
Min
-
-
10
P
V
-1
DS
t
(V)
p
Typ
-
50
T
t
p
(s)
© NXP B.V. 2011. All rights reserved.
t
p
δ =
100 μ s
1 ms
10 ms
100 ms
= 10 μ s
03ng55
03ng56
Max
0.5
-
T
t
p
t
10
1
2
Unit
K/W
K/W
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