BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 5
![MOSFET N-CH 55V 75A D2PAK](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK764R0-55B
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
-1
-2
-3
3
2
1
1
10
10
(1) Capped at 75 A due to package.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.05
0.2
0.1
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Limit R
10
-5
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
-4
(1)
Rev. 5 — 22 April 2011
Conditions
see
mounted on a printed-circuit
board; minimum footprint
Figure 5
10
-3
DC
N-channel TrenchMOS standard level FET
10
10
-2
BUK764R0-55B
Min
-
-
10
P
V
-1
DS
t
(V)
p
Typ
-
50
T
t
p
(s)
© NXP B.V. 2011. All rights reserved.
t
p
δ =
100 μ s
1 ms
10 ms
100 ms
= 10 μ s
03ng55
03ng56
Max
0.5
-
T
t
p
t
10
1
2
Unit
K/W
K/W
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