BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK764R0-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK764R0-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 193 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
BUK764R0-55B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
see
D
j
mb
mb
mb
mb
mb
Rev. 5 — 22 April 2011
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 4
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
sup
j
≤ 175 °C
j(init)
GS
≤ 55 V; R
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure
Figure 1
1;
BUK764R0-55B
[4][5][6][
[2][3]
[2][1]
[1]
[1]
[1]
7]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
175
175
Max
55
55
20
75
193
75
774
300
193
75
774
1.2
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
J
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