BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 9
![MOSFET N-CH 55V 75A D2PAK](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK764R0-55B,118
Manufacturer Part Number
BUK764R0-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK764R0-55B118.pdf
(14 pages)
Specifications of BUK764R0-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
86nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
193 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3
NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
7000
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
-1
1
10
C
C
C
oss
iss
rss
V
All information provided in this document is subject to legal disclaimers.
DS
(V)
03nh24
10
2
Rev. 5 — 22 April 2011
Fig 15. Reverse diode current as a function of reverse
(A)
I
D
100
80
60
40
20
0
diode voltage; typical values
0.0
N-channel TrenchMOS standard level FET
0.2
BUK764R0-55B
0.4
T
j
= 175 °C
0.6
© NXP B.V. 2011. All rights reserved.
0.8
T
j
V
= 25 °C
03nh17
SD
(V)
1.0
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