BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK764R0-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK764R0-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 193 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057091118::BUK764R0-55B /T3::BUK764R0-55B /T3

NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
7000
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
-1
1
10
C
C
C
oss
iss
rss
V
All information provided in this document is subject to legal disclaimers.
DS
(V)
03nh24
10
2
Rev. 5 — 22 April 2011
Fig 15. Reverse diode current as a function of reverse
(A)
I
D
100
80
60
40
20
0
diode voltage; typical values
0.0
N-channel TrenchMOS standard level FET
0.2
BUK764R0-55B
0.4
T
j
= 175 °C
0.6
© NXP B.V. 2011. All rights reserved.
0.8
T
j
V
= 25 °C
03nh17
SD
(V)
1.0
9 of 14