AO4406 Alpha & Omega Semiconductor Inc, AO4406 Datasheet
AO4406
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AO4406 Summary of contents
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... AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical ...
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... AO4406 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 10V 4. (Volts) DS Fig 1: On-Region Characteristics =2. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 30 125°C 20 25° 0.00 2.00 4.00 6.00 V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =1. 0.5 1.8 1 ...
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... AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =11. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 1ms limited 10.0 10ms 0.1s 1s 1.0 10s T =150°C J(Max) T =25° 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA J,PK ...
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... AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.00001 0.0001 Time in avalanche, t Figure 12: Avalanche capability Alpha & Omega Semiconductor, Ltd =25°C A ⋅ − 0.001 25 (s) A 10s Steady- State 50 75 100 125 T (°C) CASE Figure 13: Power De-rating (Note A) www.aosmd.com 150 ...
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... AO4406 + Vgs Ig Vds Vgs Rg Vgs Vds Id Vgs Rg Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms R L Vds + DU T Vdd Vgs t d(o n) ...