AON6414A Alpha & Omega Semiconductor Inc, AON6414A Datasheet

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AON6414A

Manufacturer Part Number
AON6414A
Description
MOSFET N-CH 30V 5X6DFN
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AON6414A.pdf (6 pages)

Specifications of AON6414A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1380pF @ 15V
Power - Max
31W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1226-2

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Rev 3: Oct 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.05mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AON6414A uses advanced trench technology to
provide excellent R
suitable for use as a high side switch in SMPS and
general purpose applications.
Top View
Top View
B
A
Parameter
C
DS(ON)
DFN5X6
DFN5X6
PIN1
PIN1
C
T
T
T
T
T
T
T
T
C
C
A
A
C
C
A
A
=25° C
=100° C
=25° C
=70° C
=25° C
=100° C
=25° C
=70° C
, low gate charge.This device is
C
Bottom View
Bottom View
A
A D
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AS
www.aosmd.com
J
DS
GS
GS
AS
D
DSM
, T
, I
R
R
, E
AR
STG
JA
JC
AR
Product Summary
V
I
R
R
100% UIS Tested
100% R
1
1
2
2
3
3
4
4
D
DS
DS(ON)
DS(ON)
(at V
Top View
Top View
Typ
3.4
17
44
(at V
(at V
GS
g
=10V)
Tested
GS
GS
Maximum
-55 to 150
8
8
7
7
6
6
5
5
=4.5V)
=10V)
12.5
±20
±20
140
2.3
1.5
30
50
30
13
10
35
31
31
30V N-Channel MOSFET
Max
21
53
4
G
G
AON6414A
30V
50A
< 8m
< 10.5m
D
D
S
S
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
W
V
V
V
A
A
A
Page 1 of 6

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AON6414A Summary of contents

Page 1

... General Description The AON6414A uses advanced trench technology to provide excellent R , low gate charge.This device is DS(ON) suitable for use as a high side switch in SMPS and general purpose applications. DFN5X6 DFN5X6 Top View Top View Bottom View Bottom View PIN1 PIN1 Absolute Maximum Ratings T =25° ...

Page 2

Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 140 10V 10V 6V 6V 120 120 7V 7V 100 100 (Volts) (Volts Fig ...

Page 4

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =15V =15V =20A =20A (nC) (nC) g ...

Page 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25°C =25° =150°C =150° =125°C =125° 0.000001 ...

Page 6

VDC VDC - - Vgs Vgs Ig Ig Vds Vds Vgs Vgs Rg Rg Vgs Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L L Vds Vds Id Id ...

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