SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 2

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-250µA
=-60V, V
=-60V, V
=0V, I
=-20V, V
=-4.5V, I
=-10V, I
Rev 2.5
2
cooling area
D
=-250µA
D
D
GS
GS
DS
=-6.8A
=-5.4A
=0V, T
=0V, T
=0V
j
j
1)
=25°C
=150°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
0.3
0.2
-
-
-
-
-
SPD09P06PL G
max.
max.
-100
-100
0.25
100
0.4
3.6
75
50
2008-07-29
-2
-1
-
Unit
V
µA
nA
Unit
K/W