SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 5

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
-24
-20
-18
-16
-14
-12
-10
A
A
25
15
10
-8
-6
-4
-2
Rev 2.5
0
5
0
0
0
SPD09P06PL
DS
GS
P
tot
); T
1
); V
= 42W
p
p
-2
= 80 µs
= 80 µs
j
DS
=25°C
2
-4
2 x I
3
k
j
D
-6
4
x R
5
DS(on)max
-8
i
g
e
c
a
6
h
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
V
V
V
V
DS
GS
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-7.0
-8.0
-12
8
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
0.8
0.6
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
S
0
4
3
2
1
0
0
0
D
SPD09P06PL
V
= f (I
-3.0
GS
); T
c
c
-2
1
[V] =
-3.5
d
j
=25°C
D
fs
GS
d
-4
2
)
-4.0
e
-6
-4.5
e
3
f
-5.0
-8
g
4
f
-5.5
-10 -12 -14 -16
h
5
SPD09P06PL G
-6.0
g
i
6
-7.0
j
7
2008-07-29
h
-8.0
k
8
i
A
I
D
I
V
D
j
k
-20
10