IPD031N03M G Infineon Technologies, IPD031N03M G Datasheet - Page 4

• Manufacturer Part Number: IPD031N03M G
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD031N03M G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPD031N03M G; IPD031N03M GINTR; SP000313126

Rev. 1.03
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
DC
0
T
V
C
DS
100
[°C]
[V]
10
100 µs
1
1 ms
10 ms
10 µs
150
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
10
); V
p
0
0
)
-6
0.02
0.01
0.5
0.2
0.05
0.1
GS
≥10 V
single pulse
10
p
0
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPD031N03L G
IPS031N03L G
0
-2
150
10
0
-1
2008-04-15
200
10
1
0