IPD031N03M G Infineon Technologies, IPD031N03M G Datasheet - Page 7

• Manufacturer Part Number: IPD031N03M G
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD031N03M G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPD031N03M G; IPD031N03M GINTR; SP000313126

Rev. 1.03
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
34
32
30
28
26
24
22
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
0
20
150 °C
t
T
AV
j
10
60
[°C]
[µs]
1
100 °C
100
25 °C
10
2
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
10
=30 A pulsed
g s
20
Q
Q
gate
g
Q
30
sw
[nC]
Q
g d
40
IPD031N03L G
IPS031N03L G
6 V
50
Q
24 V
15 V
g ate
2008-04-15
60