BSO303SP H Infineon Technologies, BSO303SP H Datasheet - Page 4

• Manufacturer Part Number: BSO303SP H
• Description: MOSFET P-CH 30V 7.2A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 31.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
10
10
=f(T
10
10
10
2.5
1.5
0.5
-1
-2
2
1
0
10
3
2
1
0
DS
100
0.01
10
0.1
1
0.1
A
-1
0
); T
); t
p
A
p
≤10 s
=25 °C
40
1)
10
; D =0
limited by on-state
resistance
1
0
-V
T
DS
A
80
[°C]
[V]
10
10 ms
10
DC
100 µs
1 ms
1
120
10 µs
1 µs
160
page 4
10
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJS
=f(T
10
10
10
10
10
=f(t
-1
-2
2
1
0
10
10
A
8
6
4
2
0
0.01
100
10
0.1
0.00001
1
); |V
0.02
0.05
0.1
-5
0.5
0.2
0.01
p
0
)
single pulse
GS
10
|≥10 V; t
0.0001
-4
p
/T
40
10
0.001
p
-3
≤10 s
T
t
A
10
p
80
[°C]
0.01
[s]
-2
10
0.1
-1
BSO303SP H
120
10
1
0
2010-05-12
160
10
10
1