BSO303SP H Infineon Technologies, BSO303SP H Datasheet - Page 6

• Manufacturer Part Number: BSO303SP H
• Description: MOSFET P-CH 30V 7.2A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 31.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
28
24
20
16
12
4
3
2
DS
=f(T
8
4
0
10000
1000
100
0
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=-9.1 A; V
typ.
10
20
Crss
-V
GS
Coss
Ciss
T
98 %
=-10 V
DS
15
j
60
[°C]
[V]
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
2.5
1.5
0.5
0.1
10
=f(T
SD
2
1
0
1
-60
)
0
j
); V
j
GS
-20
=V
0.5
DS
25 °C, typ
20
; I
D
150 °C, typ
=-100 µA
min.
-V
T
max.
typ.
j
SD
60
[°C]
1
150 °C, 98%
[V]
100
BSO303SP H
1.5
25 °C, 98%
140
2010-05-12
180
2