IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet - Page 5
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IPD50N06S2-14
Manufacturer Part Number
IPD50N06S2-14
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD50N06S2-14.pdf
(9 pages)
Specifications of IPD50N06S2-14
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.4 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252171
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INF
Quantity:
9 999
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
160
120
100
80
40
90
80
70
60
50
40
30
20
10
0
0
DS
GS
0
2
); T
); V
GS
j
j
DS
= 25 °C
1
= 6V
3
10 V
2
175 °C
4
3
V
V
25 °C
GS
DS
6.5 V
6 V
5.5 V
5 V
[V]
[V]
7 V
4
-55 °C
5
5
6
6
page 5
7
7
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
80
70
60
50
40
30
20
10
50
40
30
20
10
0
= (I
D
0
0
); T
D
); T
j
= 25°C
fs
GS
j
20
20
= 25 °C
5.5 V
40
40
I
I
D
D
[A]
[A]
60
60
IPD50N06S2-14
6 V
80
80
2008-10-21
10 V
6.5 V
7 V
100
100