IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet - Page 6
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IPD50N06S2-14
Manufacturer Part Number
IPD50N06S2-14
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD50N06S2-14.pdf
(9 pages)
Specifications of IPD50N06S2-14
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.4 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252171
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INF
Quantity:
9 999
Company:
Part Number:
IPD50N06S2-14
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
30
25
20
15
10
5
0
DS
4
3
2
= f(T
-60
0
); V
D
j
)
GS
= 32 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
V
T
DS
j
60
15
[°C]
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
3.5
2.5
1.5
10
10
10
10
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
0.4
= V
175 °C
20
DS
0.6
80 µA
V
T
25 °C
SD
j
0.8
60
[°C]
[V]
400 µA
1
IPD50N06S2-14
100
1.2
140
2008-10-21
1.4
180
1.6