SPD18P06P G Infineon Technologies, SPD18P06P G Datasheet
SPD18P06P G
Specifications of SPD18P06P G
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SPD18P06P G Summary of contents
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SIPMOS Power-Transistor Features P-Channel · · Enhancement mode Avalanche rated · rated · 175°C operating temperature · Type Package SPD18P06P P-TO252-3 SPU18P06P P-TO251-3 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -18 Gate to drain charge -18 Gate charge total V = ...
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Power dissipation tot C SPD18P06P 100 120 140 160 Safe operating area ...
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Typ. output characteristic =25° parameter µs p SPD18P06P - 80.00W tot -35 -30 -25 -20 -15 - ...
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Drain-source on-state resistance DS(on) j parameter : I = -13 SPD18P06P 0.38 W 0.32 0.28 0.24 0.20 98% 0.16 typ 0.12 0.08 0.04 0.00 -60 - Typ. capacitances C ...
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Avalanche energy para -18 - 160 mJ 120 100 105 Drain-source breakdown voltage ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...