SPD18P06P G Infineon Technologies, SPD18P06P G Datasheet

SPD18P06P G

Manufacturer Part Number

SPD18P06P G

Description

MOSFET P-CH 60V 18.6A TO252-3

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheets

1.SPD18P06P_G.pdf (10 pages)

2.SPD18P06P_G.pdf (9 pages)

Specifications of SPD18P06P G

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

130 mOhm @ 13.2A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

18.6A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

33nC @ 10V

Input Capacitance (ciss) @ Vds

860pF @ 25V

Power - Max

80W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.13 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18.6 A

Power Dissipation

80000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package

DPAK (TO-252)

Vds (max)

-60.0 V

Rds (on) (max) (@10v)

130.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000443926

Current page: 1 of 10
Download datasheet (562Kb)

SIPMOS

Features

° Pb-free lead plating; RoHS compliant

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Type

SPD18P06P G

Enhancement mode

jmax

175°C operating temperature

P-Channel

Avalanche rated

d v /d t rated

= -18.6 A, V

= -18.6 A , V

Rev 3.4

= 25 °C

= 100 °C

= 25 °C

= 175 °C

Power-Transistor

= -48 V, d i /d t = 200 A/µs,

= -25 V, R

Package

PG-TO252-3

= 25 °C, unless otherwise specified

= 25

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

jmax

Page 1

Symbol

d v /d t

D puls

j ,

tot

stg

Pin 1

-55...+175

55/175/56

Value

-18.6

-13.2

-74.4

150

±20

DS(on)

SPD18P06P G

PIN 2/4

2008-09-02

-18.6

0.13

-60

PIN 3

Unit

kV/µs

°C

Related parts for SPD18P06P G

SPD18P06P G Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 3.4 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Symbol puls jmax tot stg Page 1 SPD18P06P 0.13 DS(on -18 Pin 1 PIN 2/4 PIN Value Unit A -18.6 -13.2 -74.4 150 kV/µs ± ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 3.4 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPD18P06P G Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 - ...

Page 3

... W G Rise time Turn-off delay time Fall time Rev 3 °C, unless otherwise specified j Symbol -13 d(on) = -13 -13 d(off) = -13 -13 Page 3 SPD18P06P G Values min. typ. max 690 iss - 230 oss - 95 rss - 12 - 5 Unit - S 860 pF 290 120 18 ns 8.7 37 16.5 2008-09-02 ...

Page 4

... Inverse diode forward voltage -18 Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 3 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPD18P06P G Values Unit min. typ. max. - 4 -5. Values Unit min. typ. max -18 -74 -1. 105 ns - 139 208 nC 2008-09-02 ...

Page 5

... Rev 3.4 Drain current parameter: V -20 A -16 -14 -12 - °C 190 Transient thermal impedance thJC parameter : 29.0µs K 100 µ -10 - Page 5 SPD18P06P ³ GS SPD18P06P 100 120 140 160 ) SPD18P06P D = 0.50 single pulse - 2008-09-02 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 6

... - Typ. forward transconductance parameter - Page 6 SPD18P06P SPD18P06P [ -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8 -12 -16 -20 -24 -28 - =25° -10 -15 -20 2008-09- -9.0 -10 ...

Page 7

... T j Forward characteristics of reverse diode parameter -10 A -10 C iss C oss -10 C rss -10 V -25 - Page 7 SPD18P06P -60 - 100 ) µs p SPD18P06P °C typ 175 °C typ °C (98 175 °C (98 0.0 -0.4 -0 ...

Page 8

... Drain-source breakdown voltage (BR)DSS j SPD18P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev 3.4 Typ. gate charge V GS parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPD18P06P Gate = -18.6 A pulsed D SPD18P06P V 0,2 DS max - 0,8 DS max Gate 2008-09-02 ...

Page 9

... Package outline: PG-TO252-3 Rev 3.4 page 9 SPD18P06P G 2008-09-02 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 3.4 ). (www.infineon.com Page 10 SPD18P06P G 2008-09-02 ...

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