SPD18P06P G Infineon Technologies, SPD18P06P G Datasheet - Page 5

• Manufacturer Part Number: SPD18P06P G
• Description: MOSFET P-CH 60V 18.6A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD18P06P G

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.6 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000443926

Power dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev 3.4
-10
-10
-10
W
A
= f ( T
90
70
60
50
40
30
20
10
0
2
1
0
-10
0
SPD18P06P
SPD18P06P
DS
-1
C
20
)
)
40
60
-10
0
80 100 120 140 160
C
= 25 °C
-10
1
DC
V
T
V
°C
t p = 29.0µs
C
DS
100 µs
1 ms
10 ms
190
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
10
10
10
10
A
-20
-16
-14
-12
-10
-8
-6
-4
-2
-1
-2
-3
-4
0
= f ( t
1
0
10
0
SPD18P06P
SPD18P06P
C
-7
)
20
p
10
single pulse
)
GS
-6
40
³
10
60
p
10 V
-5
/ T
80 100 120 140 160
10
-4
10
SPD18P06P G
-3
10
2008-09-02
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0