BSO201SP H Infineon Technologies, BSO201SP H Datasheet

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BSO201SP H

Manufacturer Part Number
BSO201SP H
Description
MOSFET P-CH 20V 12A 8SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO201SP H

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 4.5V
Input Capacitance (ciss) @ Vds
9600pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Package
SO-8
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
8.0 mOhm
Rds (on) (max) (@2.5v)
12.9 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev.1.32
Features
• single P-Channel in SO8
• Qualified according JEDEC
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO201SP H
®
P-Power-Transistor
1)
2)
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
1)
1)
for target applications
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
201SP
stg
V
V
V
V
T
I
T
JESD22-A114 HBM
D
page 1
A
A
GS
GS
GS
GS
=-14.9 A, R
=25 °C
=25 °C
=4.5 V, T
=4.5 V, T
=2.5 V, T
=2.5 V, T
A
A
A
A
Lead free
GS
Yes
V
R
I
=25 °C
=70 °C
=25 °C
=70 °C
Product Summary
D
=25 Ω
DS
DS(on),max
10 secs
14.9
11.9
11.8
Yes
9.4
2.5
Halogen free
V
V
1C (< 2 kV)
GS
GS
-55 ... 150
55/150/56
=4.5 V
=2.5 V
Value
59.6
248
260
±12
PG-DSO-8
steady state
12.0
9.4
9.3
7.4
1.6
BSO201SP H
-14.9 A
12.9
-20
8.0
Packing
dry
Unit
A
mJ
V
W
°C
°C
V
mΩ
2009-12-21

Related parts for BSO201SP H

BSO201SP H Summary of contents

Page 1

... =70 ° =25 °C D,pulse =-14 =25 °C tot stg JESD22-A114 HBM page 1 BSO201SP H - =4.5 V 8.0 DS(on),max GS V =2.5 V 12.9 GS -14.9 A PG-DSO-8 Packing Halogen free dry Yes Value 10 secs steady state 14.9 12.0 11.9 9.4 11.8 9.3 9.4 7.4 59.6 =25 Ω ...

Page 2

... (BR)DSS 0. -250 µA GS(th =- DSS T =25 ° =- =150 ° - GSS =2 =-11.8 A DS(on =4 =-14 |>2 DS(on)max =-11 page 2 BSO201SP H Values Unit min. typ. max K 110 - - 150 , - - - -0.6 -0.9 -1.2 - 0.1 1 µ 100 - - -100 nA - 10.3 12.9 mΩ - 6.7 8.0 Ω 2009-12-21 ...

Page 3

... A, R d(off g( plateau oss =25 ° S,pulse =-14 =25 ° = /dt =100 A/µ = /dt =100 A/µs F page 3 BSO201SP H Values min. typ. max. - 6400 9600 - 2100 3150 - 1700 2550 - 149 - 99 149 - 162 243 - -10 - -16 - -23 -39 - -26 -38 - -66 - -59 1 109 Unit 2009-12-21 ...

Page 4

... parameter limited by on-state resistance Rev.1.32 2 Drain current I =f parameter 120 160 0 [° Max. transient thermal impedance Z =f(t thJA p parameter 100 µ 100 [V] DS page 4 BSO201SP H ≤ 4 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2009-12-21 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 150 ° 0.0 0.5 1 Rev.1.32 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 120 100 25° 1.5 2.0 2.5 0 [V] GS page 5 BSO201SP =25 ° 2.0 V 2.2 V 2.5 V 3 [A] D =25 ° [ 2009-12-21 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 1 10 Coss 0 10 Crss - [V] DS page 6 BSO201SP -250 µ - 100 140 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0 0.5 1 1.5 V [V] SD 180 2 2009-12-21 ...

Page 7

... Rev.1.32 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 6 125 ° 100 1000 0 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 T [°C] j page 7 BSO201SP =-14.9 A pulsed gate 100 120 - Q [nC] gate 140 Q g ate 2009-12-21 ...

Page 8

... Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.32 page 8 BSO201SP H 2009-12-21 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.1.32 page 9 BSO201SP H 2009-12-21 ...

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