BSO201SP H Infineon Technologies, BSO201SP H Datasheet - Page 2

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BSO201SP H

Manufacturer Part Number
BSO201SP H
Description
MOSFET P-CH 20V 12A 8SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO201SP H

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 4.5V
Input Capacitance (ciss) @ Vds
9600pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Package
SO-8
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
8.0 mOhm
Rds (on) (max) (@2.5v)
12.9 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev.1.32
1)
connection. PCB is vertical in still air.
2)
3)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3 for more detailed information
See figure 13 for more detailed information
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
G
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
0.25 mA
V
V
T
V
T
V
V
V
|V
I
p
p
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-11.8 A
DS
=V
=-20 V, V
=-20 V, V
=0 V, I
= -12 V, V
=2.5 V, I
=4.5 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
|R
D
D
= -
= -250 µA
D
D
DS(on)max
GS
GS
=-11.8 A
=-14.9 A
DS
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
-0.6
-20
40
-
-
-
-
-
-
-
-
-
-
-
Values
10.3
typ.
-0.9
0.1
6.7
3.8
10
71
-
-
-
-
-
-
-
BSO201SP H
max.
-100
12.9
-1.2
110
150
100
8.0
35
50
80
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
S
2009-12-21

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