IPD90N06S4-04 Infineon Technologies, IPD90N06S4-04 Datasheet - Page 7

• Manufacturer Part Number: IPD90N06S4-04
• Description: MOSFET N-CH 60V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N06S4-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 90µA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.2
13 Avalanche energy
E
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
400
300
200
100
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
); I
gate
D
); I
DD
= 45 A
D
20
= 90 A pulsed
75
40
Q
T
gate
j
[°C]
[nC]
60
125
12 V
80
48 V
100
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
66
64
62
60
58
56
V
g (th)
g s(th)
-55
GS
= f(T
j
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
j
Q
[°C]
65
sw
Q
g d
IPD90N06S4-04
105
2009-07-01
145
Q
gate