BUZ32 Infineon Technologies, BUZ32 Datasheet - Page 3

• Manufacturer Part Number: BUZ32
• Description: MOSFET N-CH 200V 9.5A TO220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ32; BUZ32IN; BUZ32X; BUZ32XK; SP000011345

Electrical Characteristics, at T
Rev. 2.3
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
≥
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 50
= 50
= 50
= 50
2
*
I
D *
Ω
Ω
Ω
Ω
DS
DS
DS
R
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 3 A
= 3 A
= 3 A
= 3 A
= 6 A
j
= 25˚C, unless otherwise specified
t
Symbol
g
C
C
C
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
Page 3
-
-
-
-
-
min.
-
-
3
Values
typ.
4.6
400
85
45
10
40
55
30
max.
-
60
75
40
530
130
70
15
2009-04-08
BUZ 32
ns
Unit
S
pF