BUZ32 Infineon Technologies, BUZ32 Datasheet - Page 6

• Manufacturer Part Number: BUZ32
• Description: MOSFET N-CH 200V 9.5A TO220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ32

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ32; BUZ32IN; BUZ32X; BUZ32XK; SP000011345

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics
parameter: t
V
Rev. 2.3
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
13
11
10
22
18
16
14
12
10
A
A
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
DS
0
0
D
)
P
tot
p
x R
1
p
2
= 80 µs
= 75W
= 80 µs
DS(on)max
2
4
3
l
6
4
k
j
I
5
8
D
= f ( V
6
10
GS
7
12
)
8
i
g
e
c
a
h
f
d
b
V
V
V GS [V]
V
GS
h 7.5
i
j
k 10.0
l 20.0
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f
g 7.0
DS
V
6.5
8.0
9.0
16
10
Page 6
Typ. forward transconductance
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
fs
DS
DS (on)
DS (on)
≥
2 x I
5.0
4.5
6.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
Ω
0
0
D
= ƒ( I
V
V
GS
GS
x R
4.0
4.5
a
a
p
a
= 80 µs,
[V] =
[V] =
D
GS
5.0
DS(on)max
2
b
)
4
b
5.5
c
4
c
6.0
d
8
6.5
e
d
7.0
6
f
12
g
e
7.5
fs
g
= f
8
8.0
h
f
( I
16
9.0
D
i
g
)
2009-04-08
10.0
BUZ 32
A
j
I
h
D
I
D
A
k
20.0
i
k
j
12
22