IPB80N04S2-H4 Infineon Technologies, IPB80N04S2-H4 Datasheet - Page 5

• Manufacturer Part Number: IPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218165

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
320
280
240
200
160
120
50
80
40
0
0
DS
GS
0
2
); T
10 V
); V
GS
j
j
DS
= 25 °C
= 6V
7 V
3
2
175 °C
4
4
6.5 V
V
V
25 °C
GS
DS
[V]
[V]
-55 °C
5
6
6
8
5.5 V
6 V
5 V
10
7
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
200
175
150
125
100
18
14
10
75
50
25
6
2
0
= (I
D
0
); T
0
D
); T
j
= 25°C
fs
GS
j
IPP80N04S2-H4, IPI80N04S2-H4
= 25 °C
80
5.5 V
50
I
I
D
160
D
[A]
[A]
6 V
IPB80N04S2-H4
100
240
2008-02-22
6.5 V
10 V
7 V
150
320