IPB80N04S2-H4 Infineon Technologies, IPB80N04S2-H4 Datasheet - Page 9

• Manufacturer Part Number: IPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218165

Rev. 1.1
Revision History
Version
Revision 1.1
Revision 1.1
Date
22.02.2008
22.02.2008
page 9
IPP80N04S2-H4, IPI80N04S2-H4
Changes
Update of side 1 and 10 according
to new template
Update of SOA diagram, labelling
IPB80N04S2-H4
2008-02-22