SPI12N50C3 Infineon Technologies, SPI12N50C3 Datasheet - Page 3
![MOSFET N-CH 560V 11.6A TO-262](/photos/5/53/55396/448-to-262__i2pak__sml.jpg)
SPI12N50C3
Manufacturer Part Number
SPI12N50C3
Description
MOSFET N-CH 560V 11.6A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP12N50C3.pdf
(14 pages)
Specifications of SPI12N50C3
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014467
SPI12N50C3
SPI12N50C3IN
SPI12N50C3X
SPI12N50C3XK
SPI12N50C3
SPI12N50C3IN
SPI12N50C3X
SPI12N50C3XK
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPI12N50C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPI12N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 I
Identical low-side and high-side switch.
Rev. 3.1
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
5)
6)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
j
d(on)
r
d(off)
f
= 25 °C, unless otherwise specified
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
BR, DSS
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
D
D
DS
GS
GS
DS
DD
DD
DD
GS
DD
=7A
=11.6A, R
≥ 2*I
=0V to 400V
=0V, V
=0V,
=380V, V
=400V, I
=400V, I
=0 to 10V
=400V, I
Page 3
Conditions
, T
D
j
*R
<T
DS
DS(on)max
G
j,max
D
D
D
GS
=6.8 Ω
=25V,
=11.6A
=11.6A,
=11.6A
=0/10V,
.
oss
oss
SPI12N50C3, SPA12N50C3
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
400
*f.
26
49
30
45
92
10
45
5
5
8
8
8
SPP12N50C3
2009-11-30
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns
DSS
DSS
.
.