SPI12N50C3 Infineon Technologies, SPI12N50C3 Datasheet - Page 8
![MOSFET N-CH 560V 11.6A TO-262](/photos/5/53/55396/448-to-262__i2pak__sml.jpg)
SPI12N50C3
Manufacturer Part Number
SPI12N50C3
Description
MOSFET N-CH 560V 11.6A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP12N50C3.pdf
(14 pages)
Specifications of SPI12N50C3
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014467
SPI12N50C3
SPI12N50C3IN
SPI12N50C3X
SPI12N50C3XK
SPI12N50C3
SPI12N50C3IN
SPI12N50C3X
SPI12N50C3XK
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPI12N50C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPI12N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
13 Forward characteristics of body diode
I
parameter: T j , t
15 Avalanche energy
E
par.: I
Rev. 3.1
F
AS
= f (V
mJ
10
10
10
10
350
250
200
150
100
= f ( T
A
50
-1
D
0
2
1
0
20
0
SPP12N50C3
= 5.5 A, V
SD
j
)
)
0.4
40
0.8
p
60
= 10 µs
DD
1.2
T
T
T
T
= 50 V
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
2
120
2.4
°C
V
T
V
j
SD
160
3
Page 8
14 Avalanche SOA
I
par.: T
16 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
600
570
560
550
540
530
520
510
500
490
480
470
460
450
A
V
11
9
8
7
6
5
4
3
2
1
0
-60
10
j
≤ 150 °C
SPP12N50C3
AR
-3
= f ( T
SPI12N50C3, SPA12N50C3
)
10
-20
-2
j
)
10
T
20
j (START)
-1
=125°C
10
0
60
10
SPP12N50C3
1
100
10
2009-11-30
T
2
j (START)
°C
=25°C
t
T
µs
AR
j
180
10
4