IPP70N10SL-16 Infineon Technologies, IPP70N10SL-16 Datasheet
IPP70N10SL-16
Specifications of IPP70N10SL-16
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IPP70N10SL-16 Summary of contents
Page 1
... Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 P-TO262-3-1 Ordering Code SP0002-25708 SP0002-25700 SP000225705 = 25 °C, unless otherwise specified j jmax Page 1 IPP70N10SL-16, IPB70N10SL-16 Product Summary DS(on P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Marking N10L16 N10L16 N10L-16 Symbol ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Values min. typ. max 0 62 Values min. typ. max. 100 - - 1.2 1 ...
Page 3
... I =70A =80V, I =70A 10V GS V (plateau) V =80V, I =70A =25° =0V, I =140A =50V =100A/µ Page 3 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Values min. typ. max 3630 4540 - 640 800 - 345 430 - 70 105 - 250 375 - 250 375 - 95 145 - 160 240 - 3. 280 - 1.2 1.8 - 100 ...
Page 4
... Safe operating area parameter : ° SPP70N10L Drain current I D parameter: V °C 190 Max. transient thermal impedance Z thJC parameter : 18.0µs 100 µ Page 4 IPP70N10SL-16, IPB70N10SL- ≥ SPP70N10L 100 120 140 160 = SPP70N10L single pulse - IPI70N10SL-16 °C ...
Page 5
... 0.5 1 1.5 2 2.5 6 Typ. drain-source on resistance R DS(on) parameter [V] a 2.5 b 3.0 c 3 4.5 f 5.0 g 5 6.5 j 7.0 k 8 Typ. forward transconductance DS(on)max fs parameter 3 Page 5 IPP70N10SL-16, IPB70N10SL- SPP70N10L mΩ [ 3.0 3.5 4.0 4.5 5.0 5 =25° IPI70N10SL- 6.5 7 ...
Page 6
... MHz Typ. gate threshold voltage V GS(th) = 4.5 V parameter: V 100 140 °C 200 Forward character. of reverse diode parameter iss C oss C rss Page 6 IPP70N10SL-16, IPB70N10SL- 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 - 100 ) µ SPP70N10L °C typ 175 ° ...
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... V 114 112 110 108 106 104 102 100 -60 - Typ. gate charge Ω parameter 125 145 °C 185 T j °C 100 140 200 T j Page 7 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL- Gate = 70 A pulsed D SPP70N10L 0 max 0 max 120 160 200 280 nC Q Gate 2006-02-14 ...
Page 8
... Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support IPP70N10SL-16, IPB70N10SL-16 Page 8 IPI70N10SL-16 2006-02-14 ...