IPP70N10SL-16 Infineon Technologies, IPP70N10SL-16 Datasheet - Page 3

• Manufacturer Part Number: IPP70N10SL-16
• Description: MOSFET N-CH 100V 70A TO220-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of IPP70N10SL-16

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000225708

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
V
I
V
f =1MHz
V
I
V
V
V
T
V
V
d i
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=50A
=70A, R
=25°C
=50V, I
/d t =100A/µs
≥2*I
=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
D
*R
F =
G
F
DS
D
D
D
=140A
=1.3Ω
DS(on)max
GS
l
S
=70A
=70A,
=70A
=25V,
,
=4.5V,
IPP70N10SL-16, IPB70N10SL-16
,
min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3630
3.22
typ.
640
345
250
250
160
100
600
1.2
65
70
95
10
34
-
-
IPI70N10SL-16
2006-02-14
max.
4540
800
430
105
375
375
145
240
280
150
900
1.8
15
51
70
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC