IPP100N08S2-07 Infineon Technologies, IPP100N08S2-07 Datasheet - Page 7
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IPP100N08S2-07
Manufacturer Part Number
IPP100N08S2-07
Description
MOSFET N-CH 75V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N08S2-07.pdf
(8 pages)
Specifications of IPP100N08S2-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219005
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP100N08S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
900
800
700
600
500
400
300
200
100
= f(T
0
88
83
78
73
68
0
-60
= f(T
j
)
D
j
); I
= 80A
-20
D
50
= 1 mA
20
T
T
100
j
j
60
[°C]
[°C]
100
150
140
180
200
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
DD
IPP100N08S2-07, IPI100N08S2-07
D
= 100A pulsed
40
Q
Q
g
g
Q
Q
Q
gate
gd
gd
80
[nC]
IPB100N08S2-07
15V
120
Q
Q
gate
gate
2006-03-03
60V
160