IPW90R1K0C3 Infineon Technologies, IPW90R1K0C3 Datasheet - Page 3

• Manufacturer Part Number: IPW90R1K0C3
• Description: MOSFET N-CH 900V 5.7A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R1K0C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3.5V @ 370µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 100V
• Power - Max: 89W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.7A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413752

Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
1)
2)
3)
4)
5)
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
C
C
SD
o(er)
o(tr)
≤I
D
is a fixed capacitance that gives the same charging time as C
, di/dt≤ 200 A/µs, V
is a fixed capacitance that gives the same stored energy as C
5)
6)
p
limited by T
DClink
J,max
=400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
<V
d(on)
r
d(off)
f
rr
rrm
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
, T
V
f =1 MHz
V
to 500 V
V
V
R
V
V
V
T
V
di
J
<T
page 3
j
GS
GS
DD
GS
G
DD
GS
GS
R
=25 °C
F
=400 V, I
/dt =100 A/µs
=62.4
=0 V, V
=0 V, V
=400 V,
=10 V, I
=400 V, I
=0 to 10 V
=0 V, I
J,max
, identical low side and high side switch
F
DS
DS
=3.3 A,
D
F
oss
=3.3 A,
=I
D
oss
=100 V,
=0 V
=3.3 A,
S
while V
while V
,
DS
DS
is rising from 0 to 50% V
AV
is rising from 0 to 50% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
typ.
850
100
400
340
4.6
0.8
4.1
42
28
70
20
35
15
34
21
4
IPW90R1K0C3
max.
tbd
1.2
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
V
ns
µC
A
nC
V
2008-07-29