SPP80P06P G Infineon Technologies, SPP80P06P G Datasheet - Page 3
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SPP80P06P G
Manufacturer Part Number
SPP80P06P G
Description
MOSFET P-CH 60V 80A TO-220
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPP80P06P_G.pdf
(11 pages)
Specifications of SPP80P06P G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 64A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 5.5mA
Gate Charge (qg) @ Vgs
173nC @ 10V
Input Capacitance (ciss) @ Vds
5033pF @ 25V
Power - Max
340W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000441774
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Rev 1.4
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 1
= 1
= 1
= 1
³
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= -30 V, V
= -30 V, V
= -30 V, V
2* I
W
W
W
W
D
* R
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -10 V, I
= -10 V, I
= -10 V, I
= -10 V, I
, I
D
= -64 A
D
D
D
D
= -64 A,
= -64 A,
= -64 A,
= -64 A,
j
= 25 °C, unless otherwise specified
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
18
-
-
-
-
-
-
-
Values
4026
1252
typ.
437
36
24
18
56
30
SPP80P06P G
SPB80P06P G
max.
5033
1565
546
36
27
84
45
2009-11-19
-
Unit
S
pF
ns