SPP80P06P G Infineon Technologies, SPP80P06P G Datasheet - Page 5
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SPP80P06P G
Manufacturer Part Number
SPP80P06P G
Description
MOSFET P-CH 60V 80A TO-220
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPP80P06P_G.pdf
(11 pages)
Specifications of SPP80P06P G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 64A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 5.5mA
Gate Charge (qg) @ Vgs
173nC @ 10V
Input Capacitance (ciss) @ Vds
5033pF @ 25V
Power - Max
340W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000441774
Power dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev 1.4
-10
-10
-10
-10
W
360
280
240
200
160
120
A
= f ( T
80
40
0
3
2
1
0
-10
0
SPP80P06P
SPP80P06P
DS
-1
C
20
)
)
40
60
-10
0
80 100 120 140 160
C
= 25 °C
-10
1
DC
V
T
V
°C
t p = 14.0µs
C
DS
100 µs
1 ms
10 ms
190
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
10
10
10
10
10
A
-90
-70
-60
-50
-40
-30
-20
-10
-1
-2
-3
-4
-5
0
= f ( t
1
0
10
0
SPP80P06P
SPP80P06P
C
-7
)
20
p
10
single pulse
)
GS
-6
40
³
10
60
p
10 V
-5
/ T
80 100 120 140 160
10
-4
10
SPP80P06P G
SPB80P06P G
-3
10
2009-11-19
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0