SPA12N50C3 Infineon Technologies, SPA12N50C3 Datasheet - Page 2
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SPA12N50C3
Manufacturer Part Number
SPA12N50C3
Description
MOSFET N-CH 560V 11.6A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP12N50C3.pdf
(14 pages)
Specifications of SPA12N50C3
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11.6A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216322
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPA12N50C3
Manufacturer:
PANASONIC
Quantity:
9 000
Part Number:
SPA12N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Rev. 3.1
Electrical Characteristics, at T j =25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
DS
= 400 V, I
2
cooling area
D
= 11.6 A, T
3)
j
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
4)
V
I
V
T
T
V
V
T
T
f=1MHz, open drain
D
Page 2
j
j
j
j
GS
GS
DS
GS
GS
=25°C
=150°C
=25°C
=150°C
=500µA, V GS =V DS
Conditions
=500V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
d v /d t
Symbol
R
R
R
R
R
T
D
D
D
sold
=0.25mA
=11.6A
thJC
thJC_FP
thJA
thJA_FP
thJA
DS
=7A
GS
=0V
SPI12N50C3, SPA12N50C3
=0V,
min.
min.
500
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.34
0.92
typ.
typ.
600
0.1
1.4
50
35
3
-
-
-
-
-
-
-
-
-
SPP12N50C3
2009-11-30
max.
max.
0.38
260
100
100
3.8
3.9
62
80
62
1
1
-
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA
Ω