SPA12N50C3 Infineon Technologies, SPA12N50C3 Datasheet - Page 2

• Manufacturer Part Number: SPA12N50C3
• Description: MOSFET N-CH 560V 11.6A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA12N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 11.6A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 380mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216322; SPA12N50C3IN; SPA12N50C3X; SPA12N50C3XK; SPA12N50C3XTIN; SPA12N50C3XTIN

Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Rev. 3.1
Electrical Characteristics, at T j =25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
DS
= 400 V, I
2
cooling area
D
= 11.6 A, T
3)
j
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
4)
V
I
V
T
T
V
V
T
T
f=1MHz, open drain
D
Page 2
j
j
j
j
GS
GS
DS
GS
GS
=25°C
=150°C
=25°C
=150°C
=500µA, V GS =V DS
Conditions
=500V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
d v /d t
Symbol
R
R
R
R
R
T
D
D
D
sold
=0.25mA
=11.6A
thJC
thJC_FP
thJA
thJA_FP
thJA
DS
=7A
GS
=0V
SPI12N50C3, SPA12N50C3
=0V,
min.
min.
500
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.34
0.92
typ.
typ.
600
0.1
1.4
50
35
3
-
-
-
-
-
-
-
-
-
SPP12N50C3
2009-11-30
max.
max.
0.38
260
100
100
3.8
3.9
62
80
62
1
1
-
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA
Ω