SPA12N50C3 Infineon Technologies, SPA12N50C3 Datasheet - Page 3
![MOSFET N-CH 560V 11.6A TO220FP](/photos/5/53/55314/448-to-220_fullpak_sml.jpg)
SPA12N50C3
Manufacturer Part Number
SPA12N50C3
Description
MOSFET N-CH 560V 11.6A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP12N50C3.pdf
(14 pages)
Specifications of SPA12N50C3
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11.6A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216322
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPA12N50C3
Manufacturer:
PANASONIC
Quantity:
9 000
Part Number:
SPA12N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 I
Identical low-side and high-side switch.
Rev. 3.1
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
5)
6)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
j
d(on)
r
d(off)
f
= 25 °C, unless otherwise specified
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
BR, DSS
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
D
D
DS
GS
GS
DS
DD
DD
DD
GS
DD
=7A
=11.6A, R
≥ 2*I
=0V to 400V
=0V, V
=0V,
=380V, V
=400V, I
=400V, I
=0 to 10V
=400V, I
Page 3
Conditions
, T
D
j
*R
<T
DS
DS(on)max
G
j,max
D
D
D
GS
=6.8 Ω
=25V,
=11.6A
=11.6A,
=11.6A
=0/10V,
.
oss
oss
SPI12N50C3, SPA12N50C3
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
400
*f.
26
49
30
45
92
10
45
5
5
8
8
8
SPP12N50C3
2009-11-30
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns
DSS
DSS
.
.