IPI60R125CP Infineon Technologies, IPI60R125CP Datasheet - Page 4

• Manufacturer Part Number: IPI60R125CP
• Description: MOSFET N-CH 650V 25A TO-262
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPI60R125CP

• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 100V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000297355

Rev. 2.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
250
200
150
100
=f(t
10
10
10
50
0
-1
-2
0
C
10
P
0
)
)
0.05
0.02
0.01
0.5
-5
0.2
0.1
single pulse
p
/T
10
-4
40
10
-3
T
t
C
p
80
[°C]
[s]
10
-2
120
10
-1
160
10
page 4
0
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
120
105
10
10
10
10
90
75
60
45
30
15
DS
DS
0
-1
2
1
0
10
0
); T
); T
0
limited by on-state
resistance
C
p
j
=25 °C
GS
=25 °C; D =0
5
10
1
V
V
DC
DS
DS
10
[V]
[V]
6 V
7 V
10 ms
5.5 V
5 V
4.5 V
1 ms
10
20 V
100 µs
2
IPI60R125CP
15
10 µs
10 V
1 µs
8 V
2007-11-20
10
20
3