IPI60R125CP Infineon Technologies, IPI60R125CP Datasheet - Page 6

• Manufacturer Part Number: IPI60R125CP
• Description: MOSFET N-CH 650V 25A TO-262
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPI60R125CP

• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 100V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000297355

Rev. 2.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
800
600
400
200
10
9
8
7
6
5
4
3
2
1
0
0
20
j
0
); I
gate
D
); I
=11 A; V
DD
D
10
=16 A pulsed
60
DD
20
=50 V
Q
T
gate
100
j
30
[°C]
[nC]
120 V
40
140
400 V
50
180
page 6
60
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
700
660
620
580
540
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
25 °C
[°C]
1
[V]
100
25 °C, 98%
IPI60R125CP
150 °C, 98%
1.5
140
2007-11-20
180
2