SPW32N50C3 Infineon Technologies, SPW32N50C3 Datasheet

MOSFET N-CH 560V 32A TO-247

SPW32N50C3

Manufacturer Part Number
SPW32N50C3
Description
MOSFET N-CH 560V 32A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPW32N50C3

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
3.9V @ 1.8mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
284W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
560 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
284000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
32A
Drain Source Voltage Vds
560V
On Resistance Rds(on)
110mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014625
SPW32N50C3
SPW32N50C3IN
SPW32N50C3X
SPW32N50C3XK

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Please note the new package dimensions arccording to PCN 2009-134-A
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPW32N50C3
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
D
D
C
C
= 10 A, V
= 20 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO247
= 25°C
4)
p
limited by T
AR
AR
limited by T
limited by T
j max
Ordering Code
Q67040-S4613
Page 1
jmax
j max
1 )
dv/dt
Symbol
I
I
E
E
I
V
V
P
T
D
D p uls
AR
AS
AR
GS
GS
tot
j ,
T
st g
Marking
32N50C3
V
DS
R
-55... +150
DS(on)
@ T
I
D
Value
1100
±20
± 30
284
32
20
96
20
15
1
jmax
SPW32N50C3
PG-TO247
2008-02-11
0.11
560
32
Unit
A
mJ
A
V
W
°C
V/ns
V
A

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SPW32N50C3 Summary of contents

Page 1

... Please note the new package dimensions arccording to PCN 2009-134-A Ordering Code Marking Q67040-S4613 32N50C3 Symbol uls j max limited jmax limited max tot dv/dt Page 1 SPW32N50C3 @ T 560 jmax Ω R 0.11 DS(on PG-TO247 Value Unit 1100 ±20 ± 30 284 W °C -55... +150 V/ns 15 2008-02-11 ...

Page 2

... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =20A, V DS(on =25° =150° =1MHz, open Drain R G Page 2 SPW32N50C3 Value Unit 50 V/ns Values Unit min. typ. max 0.44 K 260 °C Values Unit min. typ. max. 500 - - V - 600 - 2 ...

Page 3

... V =0/10V d(on =2.7 Ω I =32A d(off =380V, I =32A =380V, I =32A 10V =380V, I =32A V D (plateau) DD =400V, V < <T . peak BR, DSS j j,max Page 3 SPW32N50C3 Values min. typ. max 4200 - - 1700 - - 181 - - 350 - - 100 - - 170 - - * while V is rising from 0 to 80% V oss ...

Page 4

... rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n T Page 4 SPW32N50C3 Values min. typ. max 1 500 = 1000 Value typ. 0.0006644 0.002479 0.00336 0.009048 0.017 0.114 E xternal H eatsink case am b 2008-02-11 Unit ...

Page 5

... Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter: t 140 A 100 0.01 single pulse Page 5 SPW32N50C3 ) DS =25° 0.001 0. 0 =25° µ 2008-02- Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4. ...

Page 6

... T 2 Ω 1.6 1.4 1.2 Vgs = 5V 1 0.8 0.6 Vgs = 4.5V 0.4 Vgs = 4V 0 Typ. transfer characteristics parameter: t 160 A 120 100 100 °C 180 Page 6 SPW32N50C3 = =150° Vgs = 5.5V Vgs = 4V Vgs = 4.5VVgs = ≥ DS(on)max = 10 µ 25°C Tj =150° 2008-02-11 Vgs = ...

Page 7

... Forward characteristics of body diode parameter 160 200 nC 260 Q Gate 12 Avalanche energy par 1.2 mJ 0.8 Tj(START)=25°C 0.6 0.4 0 µ Page 7 SPW32N50C3 ) µ SPW32N50C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 100 120 2008-02- °C 160 T j ...

Page 8

... Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A 14 Avalanche power losses parameter: E 1000 W 600 400 200 0 100 °C 180 Typ oss 22 µ 300 V 500 Page 8 SPW32N50C3 =1mJ stored energy oss ) DS 100 200 300 V 2008-02- 500 V DS ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134-A Page 9 SPW32N50C3 2008-02-11 ...

Page 10

G Rev. 2.5 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 11

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

Page 12

New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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